The 3D heterogeneous integration technology creates a new type of 3D circuit structure with high integration density and unparalleled multifunctionality by vertically stacking functional layers, which revolutionizes the field of electronics. However, traditional 3D integration technology involves complex chip processing and intricate interlayer wiring.
Recently, Ji Hoon Kang, Ki Seok Kim, Min Kyu Song, Jeehwan Kim and others from the Massachusetts Institute of Technology, Heechang Shin, Jong Hyun Ahn and others from Yonsei University in South Korea, and Sang Hoon Bae and others from Washington University in St. Louis published a paper in Nature Materials, reporting the overall 3D integration of two-dimensional material based artificial intelligence (AI) process hardware with ultimate integrability and multifunctionality.
By peeling and stacking AI process layers, mainly made of two-dimensional materials synthesized from bottom to top, a total of six layers of transistors and memristor arrays are vertically integrated into a 3D nanosystem to perform AI tasks. Due to its dense AI processing layers and inter layer connections, this fully monolithic 3D integrated AI system greatly reduces process time, voltage drop, delay, and footprint.
The successful demonstration of this single-chip 3D integrated artificial intelligence system will not only provide material level solutions for heterogeneous integration of electronic devices, but also pave the way for unprecedented multi-functional computing hardware with ultimate parallelism.
Figure 1: Monolithic three-dimensional, M3D integration of 2D material memristors and transistors.
Figure 2: Based on AI technology, a single-chip 3D M3D is integrated with a 2D material substrate 1 transistor-1 memristor array.
Figure 3: Stripping and stacking of a monolithic 3D M3D integrated 2D material device.
Figure 4: Artificial intelligence system based on single-chip 3D M3D integrated with 2D materials, DNA motif development.
Editor:Sichuan Jinzhongde Science and Technology Research Institute
Source: High functional film
