Based on ferroelectric transistor technology, in order to develop low-power, non-volatile memory computing devices, ferroelectric channel materials with proportional thickness are required. Two dimensional semiconductors (such as molybdenum disulfide, MoS2) have sliding ferroelectricity and are expected to become such ferroelectric channel materials. However, due to the lack of movable domain boundaries, achieving reversible polarization in epitaxial MoS2 remains highly challenging.
Recently, Tilo H. Yang et al. from the Massachusetts Institute of Technology reported in Nature Electronics that a polarity reversible epitaxial rhombohedral stack (3R) MoS2 can be used as a ferroelectric channel material in ferroelectric storage transistors.
Research has found that in 3R MoS2 epitaxial layers, spontaneous shear transitions can occur, resulting in a heterostructure of stable ferroelectric domains embedded in highly misaligned and unstable non ferroelectric matrices. This non diffusive phase transition process generates movable helical dislocations, and the electric field can collectively control the polarity of 3R MoS2. Polarization electric field measurement shows that the switching field of the 3R MoS2 flipping magnetic field during shear transformation is 0.036vnm − 1.
This sliding ferroelectric transistor is a non-volatile memory cell with a thickness of only two atomic layers, and exhibits a 7V average storage window, a holding time greater than 10e4 seconds, and durability greater than 10e4 cycles when a voltage of 10V is applied.
Ferroelectric transistors based on shear-transformation-mediated rhombohedral-stacked molybdenum disulfide.
Editor: Sichuan Jinzhongde Science and Technology Research Institute
Source: Today's New Materials
