In two-dimensional crystals, twist engineering can be used to design van der Waals heterostructures with layered properties. In the case of magnets, this method can provide artificial antiferromagnets with customized spin arrangements.
Recently, Carla Boix Constant, Samuel Ma ñ as Valero&Eugenio Coronado from the University of Valencia in Spain published a paper in Nature Materials, reporting the preparation of an orthogonal bilayer angle two-dimensional antiferromagnetic semiconductor, chromium sulfide bromide bromide bromide (CrSBr), and the 90 ° angle rotation of two CrSBR ferromagnetic monolayers with easy axis plane spin anisotropy.
The magnetic transport properties reveal multi-step magnetization reversal with hysteresis opening, which does not exist in the original case. By adjusting the magnetic field, the remanence state and coercivity were adjusted, and a choice was made between hysteresis and non hysteresis magnetoresistance schemes. This complexity makes spin anisotropy one of the key aspects of corner magnetic superlattices.
This result highlights the magnetic modulation of van der Waals heterostructures and the generation of various field induced phenomena, thus opening up an effective platform for creating the required magnetic symmetry and manipulating non collinear magnetic configurations.
Figure 1: Magnetic field dependence of magnetoresistance (MR) in orthogonal double-layer corner chromium sulfide bromide (CrSBr).
Figure 2: Field and temperature dependence of magnetoresistance MR in orthogonal bilayer corner CrSBr.
Figure 3: Multi step magnetization flipping with magnetic memory in orthogonal double-layer corner CrSBr.
Figure 4: Field induced spin texture in orthogonal bilayer corner CrSBr.
Editor: Sichuan Jinzhongde Science and Technology Research Institute
Source: Today's New Materials
